Highlights

Zagler, G., et al., Beam-driven dynamics of aluminium dopants in graphene, 2D Materials 9, 035009 (2022). doi:10.1088/2053-1583/ac6c30

Elibol, K., et al., Single Indium Atoms and Few-Atom Indium Clusters Anchored onto Graphene via Silicon Heteroatoms, ACS Nano 15(9), 14373–14383 (2021). doi:10.1021/acsnano.1c03535

Susi, T.et al.Single-atom spectroscopy of phosphorus dopants implanted into graphene, 2D Materials 4, 021013 (2017). doi:10.1088/2053-1583/aa5e78

Single-atom spectroscopy

Recent advances in instrumentation have made it possible to identify the composition of materials at the atomic scale using electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). When combined with modeling, even the exact nature of the bonding of single atoms can be elucidated.

The inset images show energy ranges corresponding to the P L-edge and C K-edge mapped over a single phosphorus dopant implanted into graphene. (doi:10.1088/2053-1583/aa5e78

The inset images show energy ranges corresponding to the P L-edge and C K-edge mapped over a single phosphorus dopant implanted into graphene. (doi:10.1088/2053-1583/aa5e78).